Selective vapor phase epitaxy

Abstract

Abstract PURPOSE:To significantly simplify the pattern forming process on an insulation film by selectively vapor phase growing after forming a silicon rich thin film layer on the surface of a region where the thin film is selectively formed on an insulation film. CONSTITUTION:An insulation film 2 such as an SiO2 film, an Si3N4 film, etc. is laminated on a silicon substrate 1. An ion is implanted in the aperture of a resist film 3 by ion implantation. The purpose of the ion implantation is to degenerate the surface layer of an insulation film into a silicon rich surface layer 5. Using this substrate, if the vapor phase growth of silicon is carried out, a polysilicon layer 8 is selectively grown on the insulation film 2 and an epitaxial layer 7 is grown in the aperture 6 of the substrate. These significantly simplify the pattern formation process on the insulation film 2.

Inventors

• 👤 Fumitake Mieno
• 👤 文健 三重野

Bibliographic Details