Production of silicon carbide single crystal substrate

Abstract

Abstract PURPOSE:To obtain the titled substrate of high quality with good productivity, by heating the surface of a silicon substrate in a hydrocarbon to form silicon carbide, growing a thin film of the silicon carbide by vapor-phase growth at a low temperature and growing the aimed single crystal silicon carbide by the vapor-phase growth at a high temperature. CONSTITUTION:A silicon single crystal substrate 14 is placed on a sample table 2 provided in a reactor 1, and a hydrocarbon gas, e.g. propane gas, is introduced from a branch pipe 5. A high-frequency current is passed through a working coil 4 to heat the substrate 14 to a temperature at high as about 1,350 deg.C and convert the surface of the substrate 14 into silicon carbide. The temperature of the substrate 14 is the decreased to about 1,000 deg.C, and a monosilane and hydrocarbon are then introduced to grow a thin film of polycrystal or amorphous silicon carbide on the substrate 14 by the vapor-phase growth method. The temperature is then decreased to about 1,350 deg.C, and the monosilane and hydrocarbon are introduced to grow a single crystal silicon carbide by the vapor-phase growth method and afford the aimed silicon carbide single crystal substrate.

Inventors

• 👤 Masaki Furukawa
• 👤 勝紀 古川
• 👤 Akira Suzuki
• 👤 彰 鈴木
• 👤 Mitsuhiro Shigeta
• 👤 光浩 繁田

Bibliographic Details