Semiconductor laser and light amplifier

Abstract

Abstract PURPOSE:To give single directivity to a light source for optical communication by providing a stepped part to the substrate or epitaxial growth layer. CONSTITUTION:For example, in case a pattern of PSG (Phosphorus Silicate Glass)/SiO2 is transferred to the surface of p type InGaAsP buffer layer 4 using etchant, depth of groove, namely stepped part is set to the value 0.02-0.25 mum. By providing the stepped part to the interlayer interface in the axial direction of resonator, a coupling constant to the period structure provided to the substrate or epitaxial growth surface is different in the right side and left side. When a coupling coefficient in the right side of stepped part is KR, optical output from the right end surface is IR and these of the left side are KL, IL, respectively, there is a relation of IL/IR=KR/KL. Thereby, difference is generated in the coupling coefficients in the right and left sides of stepped part and single directivity can be given to the optical output.

Inventors

• 👤 Makoto Okai
• 👤 誠 岡井
• 👤 Shinji Tsuji
• 👤 伸二 辻
• 👤 Hitoshi Nakamura
• 👤 均 中村
• 👤 Akio Oishi
• 👤 大石　昭夫
• 👤 Shinichi Hattori
• 👤 服部　信一
• 👤 Motonao Hirao
• 👤 平尾　元尚
• 👤 Hiroyoshi Matsumura
• 👤 宏善 松村

Bibliographic Details