Selectively growing method for alumina film

Abstract

Abstract PURPOSE:To coat an aluminum wiring layer with a very stable Al2O3 protective film by using an Al2O3 selectively growing method. CONSTITUTION:A substrate is filled in a plasma etching unit, boron trichloride BCl3 is fed as etching gas, gas pressure is maintained 0.2-0.3Torr, a high frequency voltage is applied to perform a plasma etching. The plasma etching with BCl3 has strong selectivity, the surface of partly exposed silicon becomes an activated surface, but does not almost react with an insulating film such as a PSG film. Then, an Al2O3 film is grown by a vapor-phase grown on the surfaces of the activated aluminum and silicon. At this time, the temperature of the substrate is held at approx. 260-320 deg.C, but if the substrate temperature is excessively high to exceed 360 deg.C, the selectivity of the Al2O3 film is lost. The Al2O3 film is not almost grown on the aluminum and silicon surface if the activated surfaces are not exposed.

Inventors

• 👤 Takayuki Oba
• 👤 隆之 大場
• 👤 Ikuro Kobayashi
• 👤 小林　郁朗
• 👤 Yoshimi Shiotani
• 👤 喜美 塩谷
• 👤 Yuji Furumura
• 👤 雄二 古村
• 👤 Fumitake Mieno
• 👤 文健 三重野

Bibliographic Details