Dry etching method

Abstract

Abstract PURPOSE:To completely dehumidify a gas for dry etching by bringing the gas for dry etching of a semiconductor wafer or the like into contact with one side of a fluorine copolymer membrane having a cation exchange group and decompressing the opposite side or bringing it into contact with a dried purging gas. CONSTITUTION:A semiconductor wafer and a semiconductor device are innovated and the quality is enhanced by using a high-degree dried air wherein a gas for etching used in a dry etching process of the semiconductor wafer or the semiconductor device is dehumidified at <=-70 deg.C dew point. In order to dehumidify the gas for etching and to make it a high-degree dried state, a flat membrane and a tubular or hollow yarn-like membrane of a fluorine copolymer having a cation exchange group such as a sulfonic acid group and a carboxylic acid group are used and the gas for etching is brought into contact with the one side thereof and a purging gas such as dried N2 is brought into contact with the other side or it is decompressed and thereby the gas for etching is dehumidified and dried. The quality and the yield of a product for the semiconductor wafer subjected thereby to dry etching are enhanced.

Inventors

• 👤 Yasuo Hashino
• 👤 橋野　康雄
• 👤 Eigo Terada
• 👤 寺田　栄吾
• 👤 Yoshiaki Kageura
• 👤 能章 影浦

Bibliographic Details