Semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To largely reduce the area of a memory cell by forming a hole at a semiconductor substrate and using the bottom of the hole and a part of a wall as the capacity, and the wall except the capacity as the gate region. CONSTITUTION:A hole 12 is formed at a P-type Si substrate 10, a P<+> type channel stopper 11 is formed, a polysilicon 15 is buried through SiO2 films 13, 14 to the midway of the hole, and coated with an SiO2 film 16. Further, a polysilicon gate 18 is formed through a gate oxide film 17 on the hole wall, coated with an interlayer insulating film 23, a window is opened on a diffused layer 19, and aluminum electrodes 22 are attached. According to this configuration, the capacity of a dynamic memory cell and a transistor are formed in the hole, and when the hole is deepened, the cell capacity can be increased without increasing the area.

Inventors

• 👤 Yukinobu Murao
• 👤 幸信 村尾

Bibliographic Details