Thin film forming device

Abstract

Abstract PURPOSE:To make the titled device small in size to one half or thereabout by a method wherein, in a microwave plasma deposition device, two sets of electrodes are positioned opposing to each other so that an electric field vertical to a magnetic field is generated in a vacuum chamber. CONSTITUTION:The titled device is formed with a vacuum chamber 1 in which a chemical vapor-deposition method is performed, a discharge tube 2 wherein a microwave discharge is performed, a coil 3 to be used to apply a magnetic field in the discharge tube 2, a waveguide 7 with which microwaves are introduced, and a microwave generating device 8. At that time, a substrate stand 9 whereon a substrate 10 is placed is provided in the vacuum chamber 1, and an electrode 4 with which an electric field is applied between the substrate stand 9 and the discharge tube 2. Then, discharge gas and reaction gas are introduced from a part tocated between the discharge tube 2 and the vacuum chamber 1 passing through a discharge gas introducing hole 6 and a reaction gas introducing hole 5, and they are jetted out into the discharge tube 2 and the vacuum chamber 1 from the inside shower. As a result, the titled device can be made small in size to one half or thereabout.

Inventors

• 👤 Masahiro Tanaka
• 👤 政博 田中
• 👤 Juichi Shimada
• 👤 嶋田　寿一
• 👤 Shinichi Matsumura
• 👤 松村　信一
• 👤 Takeshi Watanabe
• 👤 渡辺　猛志
• 👤 Mitsuo Nakatani
• 👤 中谷　光雄

Bibliographic Details