Wholly compression bonded semiconductor device

Abstract

Abstract PURPOSE:To provide a device which has high strength and electrical and thermal reliability, by forming stress-moderating grooves on both external electrodes on anode and cathode sides which have a smaller diameter than the semiconductor substrate and are approximately symmetric up and down, so that a bending moment does not function to the semiconductor substrate. CONSTITUTION:Both metal plates 3, 4 and both electrodes 10, 11 which are symmetric up and down of a silicon wafer 1 serving as a center, have smaller diameters than the silicon wafer, and grooves 17, 18 are provided on the external electrodes 10, 11. The grooves 17, 18 are formed in parallel to the compression bonding planes between the external electrodes 10, 11 and the metal plates 3, 4, at positions a little spaced away axially from the planes. Accordingly, when they are compression-bonded from up and down by a force of several tons, the silicon wafer 1 would not result in bending, so that the metal plates 3, 4 can be made thin below 1mm. Thus heat resistance can be necessarily reduced and reliability in cooling can be improved.

Inventors

• 👤 Akira Ishida
• 👤 石田　昭

Bibliographic Details