Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To conduct mask-matching in high precision even after the completion of a prescribed process, by etching a substrate to form an alignment key prior to the execution of a semiconductor device manufacturing process or the prescribed process. CONSTITUTION:A substrate 1 is etched by a prescribed method, and thereby an alignment key portion 6 having such difference in levels as enables mask- matching is formed. Next, after a first SiO2 film and a first Si3M4 film are formed, these films and the substrate 1 are etched, with a prescribed photoresist pattern used as a mask, to form a first SiO2 pattern 2, a first Si3N4 pattern 3 and a groove 4 for a separating region. Thereafter a second SiO2 film 7 is formed on the side and bottom surfaces of the groove 4 by a thermal oxidation method or the like, and then a second Si3N4 film 8 is formed on the whole surface by a vacuum CVD method or the like. The second Si3N4 film 8 is etched subsequently so as to remove same only from the bottom surface of the groove 4. Afterward, a third SiO2 film 9 is formed in the groove 4 so as to form an insulating separating region, and then the Si3N4 film and the first SiO2 film pattern 2 are removed.

Inventors

• 👤 Hideaki Shimoda
• 👤 秀明 下田
• 👤 Masaru Sasako
• 👤 勝 笹子
• 👤 Juro Yasui
• 👤 安井　十郎
• 👤 Haruhide Fuse
• 👤 玄秀 布施

Bibliographic Details