Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To contrive the improvement in yield of the products by preventing generation of a thermal etch caused by damage of high-temperature inert gas by correcting pin holes of an SiO2 film by O2 gas by involving a small quantity of oxygen (O2) gas into the inert gas at a heat treatment. CONSTITUTION:A semiconductor wafer implanted with impurities, for example, is set in a processing tube 3 and N2 gas including O2 gas of about 200ppm is introduced into said tube 3 by control of a gas controller 5. Besides, the inside of tube 3 is heated to about 1,200 deg.C by an oven 1. In the semiconductor wafer W, the impurities are thermally diffused and form wells, for example. At this time, an SiO2 film of about 300Angstrom thick is formed on a surface of the semiconductor wafer W. In some case, defects such as pin holes are produced in the SiO2 film, but these defects are corrected by the action of the O2 gas included in the N2 gas.

Inventors

• 👤 Akihiko Tani
• 👤 明彦 谷
• 👤 Takashi Aoyanagi
• 👤 隆 青柳
• 👤 Shuji Ikeda
• 👤 修二 池田
• 👤 Koichi Nagasawa
• 👤 幸一 長沢

Bibliographic Details