Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To suppress the exposure of a corner as well as to improve the characteristics of a transistor by a method wherein an insulating film is buried in the recessed part of an Si substrate in such a manner that it is protruded from the Si surface at least other than the recessed part. CONSTITUTION:A groove of approximately 0.7mum is depth is formed on an Si substrate 1 by performing a reactive ion etching (RIE) using an SiO2 film 4 as a mask. Then, after the SiO2 film is removed, an insulating film BPSG6, containing boron and phosphorus, for example, of 1.0mum or thereabout is deposited, and impurities are diffused on the Si substrate 1 by performing a heat treatment. Then, after the BPSG6 is removed, a CVD-SiO28, which is an insulating film, of 1.2mum or thereabout is deposited. Subsequently, the surface of the above is flattened using a fluidity film 9 resist, and an etching back is performed using the reactive ion etching of a resist and the CVD-SiO28. The end point is set at the place where the surface of a poly-Si3 appears. When the poly-Si3 is removed, an insulating film is formed protuberatedly on the recessed part of the substrate.

Inventors

• 👤 Teruhide Koga
• 👤 古賀　輝秀
• 👤 Katsuhiko Hieda
• 👤 克彦 稗田

Bibliographic Details