Complementary bimis tri-state gate circuit

Abstract

Abstract PURPOSE:To prevent much rash current from flowing by using a bipolar transistor (TR) for an output stage and using a CMOS circuit for a pre-stage so as to turn on the bipolar TR requiring a large drive current at transient state. CONSTITUTION:The range of input voltages where the bipolar TRs are at off/off state is adjusted by combining CMOS TRs, the bipolar TRs and resistors so as to avoid completely the on/on state of the bipolar TRs. When an enable signal Tc goes to a low level, since both a PCMO TRP3 and an NMOS TRN3 are turned on, the base potential of the PNP TRT1 goes to a high level and the base potential of the NPNT2 goes to a low level. Thus, since the PNPTRT1 and the NPNTRT2 are both turned off forcibly, the input signal VIN is changed to a high or a low level, and the output OT is kept to a high impedance state.

Inventors

• 👤 Satoru Tanizawa
• 👤 谷澤　哲

Bibliographic Details