Manufacture of field-effect transistor

Abstract

Abstract PURPOSE:To obtain an FET, source-gate series resistance thereof hardly increases and which has large gate withstanding voltage and small gate capacitance, by leaving an insulating film onto a semiconductor substrate in the vicinity of the end section of a source-drain electrode. CONSTITUTION:A channel region 22 is formed to a GaAs semi-insulating substrate 21, and an opening for shaping source-drain electrodes is formed while leaving a gate forming section 23. An ohmic metal 25 is evaporated onto the whole surface, and a first insulating film 26 is shaped onto the ohmic metal. The photo-resist 23, the ohmic metal 25 and the insulating film 26 are removed to form source-drain electrodes. The film thickness of insulating films 28 in the vicinity of the end sections of the ohmic metals 25 is shaped in size thicker than a flat section by forming a second insulating film 27 on the whole surface. When the whole surface is etched, one parts 28 of the second insulating film can be left only on the substrate 21 in the vicinity of the end sections of the ohmic metals 25, and an opening section 29 for a gate electrode can be shaped with high accuracy. A gate electrode 30 is shaped, thus forming an FET.

Inventors

• 👤 Hiraaki Tsujii
• 👤 辻井　平明

Bibliographic Details