Semiconductor memory device and manufacture thereof

Abstract

Abstract PURPOSE:To prevent punch through between capacitors and short channel effect of a transfer transistor, by forming layers of an insulation film, a storage electrode plate and capacitor dielectric film in due succession the inside of the groove formed on a substrate. CONSTITUTION:An N type drain 2 and a source 3 are formed on the surface portion of a P type Si substrate 1. A groove 5 is formed adjoining to the source 3 on the substrate 1. An insulation film 6 is formed to the side face of the groove 5 and a storage electrode 7 is formed on the surface thereof. The electrode 7 is connected with the source 3 of a transfer transistor Tr by a contact 8. A capacitor dielectric film 9 is formed on the surface of the electrode 7, additionally the inside thereof is filled up by a cell plate 10. A bit wire 13 is formed over the plate 10 through a field oxide film 12 and the wire is connected with the drain 2 of the transfer Tr. By this constitution, as the capacitor portion is insulated electrically with the substrate 1 through the film 6, punch through between capacitors and short channel effect of the transfer Tr can be prevented.

Inventors

• 👤 Masao Taguchi
• 👤 眞男 田口

Bibliographic Details