Method for stripping resist

Abstract

Abstract PURPOSE:To strip efficiently a resist contg. a surface layer deteriorated by ion implantation by side-etching the resist by the plasma of oxygen contg. gaseous fluorocarbon changed to an active seed then blowing fluid thereto in the stage of stripping said resist. CONSTITUTION:A work 6 having the deteriorated surface layer implanted with ions with the resist as a mask is disposed in an after glow discharge chamber 1. The oxygen contg. the gaseous fluorocarbon is introduced into a glow discharge chamber 3 and is excited to plasma by microwaves; thereafter the oxygen is passed through a window 2 consisting of a metallic net, by which the oxygen is changed at the active seed. The resist on the work 6 disposed in the chamber 1 is side-etched by such active seed. The fluid which does not react with the work 6 (e.g. gaseous nitrogen) is then blown to the work 6, by which the resist is removed.

Inventors

• 👤 Shuzo Fujimura
• 👤 藤村　修三

Bibliographic Details