Method of dry etching

Abstract

Abstract PURPOSE:To machine a high melting point metal in a directional property without damaging a GaAs substrate by using NF3 gas for reactive gas in the step of ultrafinely machining the metal formed on a compound semiconductor by a reactive ion etching method. CONSTITUTION:NF3 gas is used for reactive gas in the step of ultrafinely machining a high melting point metal formed on a compound semiconductor by a reactive ion etching method. For example, tungsten silicide 2 is coated by sputtering on a crystal formed with an N type active layer 10 on a semi-insulating GaAs substrate 1. A gate pattern 20 of the desired size is formed of photoresist, a tungsten silicide 3 is machined by reactive ion etching method using mixture gas of NF3 gas and N2 with it as a mask. Thus, since the metal can be machined with good controllability without damaging the GaAs, an integrated circuit using GaAs semiconductor can be performed in high performance.

Inventors

• 👤 Masaru Miyazaki
• 👤 勝 宮崎
• 👤 Takeshi Yasuda
• 👤 武 安田
• 👤 Jiyunji Masuki
• 👤 舛木　順二
• 👤 Tetsukazu Hashimoto
• 👤 哲一 橋本

Bibliographic Details