solid-state imaging device

Abstract

Abstract PURPOSE:To reduce a dark current and obtain an excellent resolution by constituting a photoelectric converting film with the three-layered structure of an N type a-Si, an I type a-Si, and a P type a-Si or a-SiC. CONSTITUTION:A metal for picture element electrodes 5 is vapor-deposited, and an N type a-Si film 21 is grown by a plasma CVD device, and the film 21 is photoetched to form picture element electrode patterns. Picture element metallic electrodes under the film 21 are patterned to electrodes 5 by the self-alignment of picture element electrode patterns of the film 21. An I type a-Si film 22 is grown to cover the film 21 by the same plasma CVD device. In this case, the surface of the film 21 is etched thinly with a mixed gas of CF4 and O2 by the same CVD device before growing the film 22, and thereafter, the film 22 is grown without exposing this surface of air. A P type a-Si thin film 23 is grown continuously, and finally, a common electrode 7 consisting of a transparent metal is formed. A P type a-SiC thin film can be used instead of the film 23.

Inventors

• 👤 Koji Senda
• 👤 耕司 千田
• 👤 Yoshimitsu Hiroshima
• 👤 広島　義光

Bibliographic Details