Manufacture of mos capacitor

Abstract

Abstract PURPOSE:To raise the precision of the capacity of a MOS capacitor by a method wherein a thin insulating film, which is used as the dielectric of the capacitor, is formed on the semiconductor substrate of one conductive type and after a high- concentration region is formed by ion-implanting an impurity in the whole surface of the substrate through the insulating film, a metal electrode is formed on the insulating film. CONSTITUTION:A thermal oxide film 2 is made to grow on an N type semiconductor substrate 1, then an etching is selectively performed on a part of the thermal oxide film 2, where is used as a MOS capacitor, by a photo etching method to form an opening and after a thin oxide film 4 is made to grow on the N type semiconductor substrate 1, which is made to expose by performing an oxidation again, ions are implanted in the whole surface and an N<+> type diffusion layer 3 is formed in the surface only of the semiconductor substrate 1, which is located just under the thin oxide film 4. After then, an electrode 5 consisting of aluminum and so forth is selectively formed on the thin oxide film 4.

Inventors

• 👤 Giichi Shimizu
• 👤 清水　義一

Bibliographic Details