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JPS6148947A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor device

Assignee: Mitsubishi Electric Corp
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Filing: 1984-08-16
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Granted: —
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Expires: 2004-08-16
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Abstract

Abstract PURPOSE:To enhance the reliability of the titled semiconductor device by a method wherein the push-up force working on the hardened sealing resin of the upper layer is prevented by providing a dispersing chamber with which the amount of thermal expansion of gel-formed resin can be relieved. CONSTITUTION:An insulative substrate 2 is adhered to the upper surface of a heat radiating plate 1, and a collector electrode 3, an emitter electrode 4 and a base electrode 5 are adhered thereon. The chip 6 of a transistor is adhered to the electrode 3. An outer casing 13 consists of an insulating material, and a partition wall 13a is hanging down. When gel-formed resin 9 is filled in the outer casing 13 in the depth L or deeper from the upper face of a heat radiating plate 1, closed space 14 is obtained, and even when hardening sealing resin 10 is filled from the upper aperture of the outer casing, no hardening sealing resin 10 is filled in the closed space 14. Accordingly, the closed space 14 can be used as an escape chamber even when the gel-formed resin 9 is thermally expanded, thereby enabling to reduce the push-up force working on the resin 10.

Inventors

  • 👤 Hajime Maeda
  • 👤 前田 甫

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-08 13:06
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/40; H10W76/42; H10W76/47; H10W76/10; H10W76/12; H10W76/15; H10W90/00; H10W90/701; H10W90/751; H10W90/754

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