Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To reduce radiation damages by channel-etching for a selective oxidation through two stages of a reactant ion etching and a wet etching. CONSTITUTION:An N type epi layer 2 is formed on a P type silicon substrate 1. A thin oxide film 3 and a nitride film 4 as a mask for a selective oxidation are formed. The films 3 and 4 are etched as a mask of a resist film 5. A channel 6 is formed in a layer 2 with a reactant ion etching. The channel 6 is etched additionally with a wet etching. A damage layer formed with the reactant ion etching in this process is eliminated.

Inventors

• 👤 Hiroyuki Okada
• 👤 裕幸 岡田

Bibliographic Details