Formation of thin film

Abstract

Abstract PURPOSE:To remarkably improve deposition rate of film and thereby improve productivity by heating the surface of target material to be sputtered. CONSTITUTION:The flat electrodes 2, 3 are provided opposed to each other within a sputtering chamber vessel 1, an upper electrode 2 is generally grounded and a substrate 4 is placed on this electrode 2 with a substrate support 5. In the case of forming a silicon oxide film, for example, a target material 8 consisting of quartz glass is placed on the electrode 3. A heater 9 for heating target is buried within the electrode 3. After the inside of vessel 1 is exhausted to the vacuum condition of about 1X10<-6>(Torr), the Ar gas, for example, is supplied from the gas supply port 11 and the gas pressure in the vessel 1 is kept at 10[mTorr]. Next, the heater 9 is heated by a power supply 10 until the surface of target 8 is heated up to about 450 deg.C and thereafter a high frequency power 7 is set for example to 7[kW] to generate discharge between the electrodes 2, 3. The target material 8 is sputtered with the Ar ion and silicon oxide film is deposited on the surface of substrate 4.

Inventors

• 👤 Riyouichi Hazuki
• 👤 巴月　良一

Bibliographic Details