Manufacture of semiconductor laser

Abstract

Abstract PURPOSE:To obtain the title device excellent in electric properties and optical properties regardless of the value of the Al composition of the first upper clas layer, by a method wherein a protection layer made of AlGaAs with an Al composition set at less than a specific value is prepared during the first growing precess in the manufacture of AlGaAs series semiconductor lasers produced by an MBE device. CONSTITUTION:During the first growing process, the protection layer 24 made of AlxGa1-xAs with an Al composition set at X<0.4 is interposed between the first upper clad layer 23 and a light absorption layer 25. This allow the first upper clad layer 23 to have passivation effect in the presence of this protection layer 24. Further, the process of thermal cleaning can produce a clear surface because of the Al composition of the protection layer 24 set at 0.4 or less. Therefore, the value of the Al composition of the first upper clad layer 23 can be arbitrarily selected; consequently, the light confining effect can be improved, and the improvement in lamination of the second grown layer 40 becomes enabled. Since the protection layer 24 can be grown by an MBE device in continuity to the other layers, a special growing process is not needed.

Inventors

• 👤 Masahito Mushigami
• 👤 雅人 虫上
• 👤 Haruo Tanaka
• 👤 田中　治夫
• 👤 Hayamizu Fukada
• 👤 深田　速水

Bibliographic Details