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JPS614250A Expired / Lapsed JP ⏱️ 0.0 years remaining

Package for semiconductor device

Assignee: Sumitomo Electric Industries Ltd
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Filing: 1984-06-19
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Granted: —
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Expires: 2004-06-19
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Abstract

Abstract PURPOSE:To obtain a semiconductor device having excellent radiation resisting property and high sealing reliability, by using Cu-W alloy including W at a specified rate as a tightly sealing material for a ceramic package. CONSTITUTION:A Cu-W alloy material 3 including 80-95wt% W is bonded to the lower surface of a ceramic package 2. The thickness of a central part 6 of the Cu-W material 3, where a semiconductor element is located, is made thick. The semiconductor element 1 is directly mounted on said Cu-W matalloy material. The Cu-W alloy material 3 is also bonded to the upper surface of the mounted semiconductor element 1. By the Cu-W alloy material layer, radiation to the semiconductor element from the outside is shielded. Even for the semiconductor having a large amount of heating, heat radiation can be performed excellently.

Inventors

  • 👤 Nobuo Ogasa
  • 👤 小笠 伸夫
  • 👤 Kazuhito Murakami
  • 👤 村上 一仁
  • 👤 Akira Otsuka
  • 👤 昭 大塚

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-10 02:07
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/60; H10W42/00; H10W42/20; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/071; H10W72/075; H10W72/07551; H10W72/50; H10W90/00; H10W90/701; H10W90/751; H10W90/754

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