Plasma processing device

Abstract

Abstract PURPOSE:To contrive simultaneous accomplishment of uniform density of reaction gas on the surface to be processed of a sample and appropriate temperature of a sample by a method wherein an inert gas supply system is provided in such a manner that the inert gas can be supplied between an electrode and the back side of the sample and on the outer circumference of the surface of the sample to be processed. CONSTITUTION:After a wafer is placed on the lower electrode 30 and a vacuum chamber is completely decompressed and evacuated to the prescribed pressure, the flow rate of the reaction gas coming from a reaction gas feeding cylinder 21 is controlled by a flow rate controlling device 22, the reaction gas passes through a gas flowing path 23, and it is supplied from a gas feeding port 24. On the other hand, the flow of inert gas such as helium and the like coming from an inert gas supply source 75 is controlled by a flow-rate controlling device 77, it passes through a gas feeding path 24, and it is brought into the space formed by a recess 71 and the back side of a wafer 60. The inert gas supplied to said space comes in contact with the back side of the wafer 60, passes through a gas flowing path 72, and supplied into the vacuum chamber 11 from the annular gas feeding port 73 of the lower electrode 30. The reaction gas supplied as above is brought into a plasmic state by the electric discharge generated between the upper electrode 20 and the lower electrode 30, and the surface to be processed of the wafer 60 can be etched in the prescribed pattern using the above-mentioned gas plasma.

Inventors

• 👤 Ryoji Fukuyama
• 👤 良次 福山
• 👤 Makoto Nawata
• 👤 誠 縄田
• 👤 Junichi Kobayashi
• 👤 淳一 小林

Bibliographic Details