Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable to remove the effect of a substrate and the defect generating on the interface between the substrate and a grown layer when a particularly thin epitaxial layer is grown by a method wherein, after an epitaxial growing of the resistivity of the same conductive type as the substrate is performed, a crystal grown layer of desired structure is formed one after another. CONSTITUTION:A growing vessel 1 is evacuated, and a substrate 13 is heated up to a suitable temperature using an infrared ray lamp 16. Valves 7 and 9 are opened, and gaseous molecule SiH2Cl2 4 containing Si and gaseous molecule AsH3 6 containing As, which is the n type dopant for Si, are introduced simultaneously by nozzles 10 and 12. At this time, the pressure inside the growing vessel 1 is brought in a suitable range, and said gas is introduced for a suitable period of time. Subsequently, the nozzles 7 and 9 are closed, the growing vessel 1 is evacuated, and a valve 8 is opened. When the valve 8 is closed and the growing vessel 1 is evacuated after H2 gas 5 has been introduced from a nozzle 11 at a suitable pressure for an appropriate period of time, a layer of Si single crystal layer of the desired thickness can be formed in the dimensional accuracy of monomolecular layer by repeating the above-mentioned cycle.

Inventors

• 👤 Junichi Nishizawa
• 👤 潤一 西澤
• 👤 Soubee Suzuki
• 👤 鈴木　壮兵衛

Bibliographic Details