Semiconductor device

Abstract

Abstract PURPOSE:To eliminate the need for fixed width and length for forming a resistor with high accuracy, and to remove trouble to fining by connecting one conduction type impurity region on the surface side and one conduction type substrate layer under a base by polycrystalline silicon buried in a well region. CONSTITUTION:A P type well 16 is formed to an N type semiconductor substrate 18, and a groove 14 is dug. An N type impurity is driven to the bottom of the groove 14 to form an insulting oxide film 19, and the insulating oxide film 19 in a section coating the bottom of the groove 14 as a contacting section is removed. Polycrystalline silicon is buried into the groove 14 and grown, and a section protruding from the groove is removed while leaving buried polycrystalline silicon 15 and a section required for connecting an N type impurity region as a drain electrode for a transistor formed to the opening section of the groove 14. The device is shaped afterward through the manufacturing process of an N channel MOS transistor using a normal P type well. Accordingly, a resistor is formed vertically to a substrate surface, thus eliminating the need for fixed width and length required on the substrate surface, the removing trouble to the fining of a layout.

Inventors

• 👤 Masahiko Shoji
• 👤 庄司　雅彦

Bibliographic Details