Vapor phase epitaxial growth process

Abstract

Abstract PURPOSE:To prevent a facet from being spread by executing epitaxial growth at low temp. in the initial stage of the growth, then executing at high temp. CONSTITUTION:A silicon oxide film 8 is formed on the surface of a single crystal silicon wafer 7, and an opening part 9 is formed by reactive ion etching to deposit a silicon nitride film on the surface. Then, the reactive ion etching is further executed to leave the silicon nitride film 10 on the side wall part alone. Further, epitaxial growth is executed at <=970 deg.C to form an epitaxial film 11 having thin film thickness. Due to the thin thickness of the epitaxial layer 11, the breadth of a facet 12 is also small. When epitaxial growth is executed thereafter at >970 deg.C, the breadth of the facet 12 is not increased.

Inventors

• 👤 Hiroshi Kitajima
• 👤 洋 北島

Bibliographic Details