Transistor substrate

Abstract

Abstract PURPOSE:To minimize wiring of a light shielding metal by providing a metallic light shielding layer on a thin film transistor through an insulating layer, and connecting electrically the metallic light shielding layer to the terminal electrode wiring of the thin film transistor through a contact hole provided on the insulating layer. CONSTITUTION:On a glass substrate 1, a TFT being a switching circuit is formed, but this TFT contains a gate electrode 2 consisting of a metallic thin film, layer insulating layer 3 and a photoconductive semiconductor layer 4. A source electrode 5 and a drain electrode 6 are provided by being connected to the semiconductor layer 4. The second insulating layer is provided to cover such a TFT structure, and a metallic light shielding layer 9a is provided on a part for covering the semiconductor layer 4 on this insulating layer 8. The light shielding metal 9a is connected onto the gate line 2 through a contact hole 30 provided on the first insulating layer and the second insulating layer.

Inventors

• 👤 Yukitoshi Okubo
• 👤 大久保　幸俊
• 👤 Yoshiyuki Osada
• 👤 芳幸 長田
• 👤 Tomoji Komata
• 👤 小俣　智司
• 👤 Masao Sugata
• 👤 菅田　正夫

Bibliographic Details