Manufacture of semiconductor fuse element

Abstract

Abstract PURPOSE:To prevent under-cuts from occurring in an SiO2 film when a fusible portion of a fuse is fused, by surrounding a section under the fusible portion with a frame of an Si3N4 film, in a case where on an Si substrate, the SiO2 film is coated on which the fuse made of polycrystalline Si is mounted. CONSTITUTION:Over an Si substrate 1, an SiO2 film 2 is coated on which a fuse 3 comprising of a fusible portion 3a and connecting portions 3b putting it therebetween is formed, using polycrystalline Si containing P, B and As, etc. Without mounting the fuse directly on the SiO2 film 2, a frame of an Si3N4 film 4 having an opening 7 under the fusible portion 3a is formed. Through the connecting portions 3b, connecting holes 5 are formed in which wiring metal layers 8 are mounted. Thereafter, the fuse 3 is surrounded by an inter-layer insulating film 4, and a protective insulating film 9 is coated containing the fuse 3. Thus a high- reliable fuse element is provided.

Inventors

• 👤 Hisao Ogawa
• 👤 小川　久夫

Bibliographic Details