Semiconductor device

Abstract

Abstract PURPOSE:To contrive to reduce load to an insulation protective layer to be applied by mechanical stress generated according to a capillary by a method wherein the part of the insulation protective layer to be overlapped on a pad metal layer is provided at the part lower than a connecting region. CONSTITUTION:An insulation protective layer 3 is formed as to make a part thereof to be overlapped on the edge part of a pad metal layer 2a, and the gold ball 5 of a gold wire 6 is connected to the exposed part acting as a connecting region 7 on the surface of the pad metal layer 2a. Moreover, the whole region of a wiring layer 2b is covered with the insulation protective layer 3, and the overlapped part thereof is provided in a recess 4 formed in an insulating layer 8 consisting of a PSG layer. By etching the insulating layer 8, a gap (t) is provided between the part of the insulation protective layer 3 overlapped on the pad metal layer 2, and the lower edge of the gold ball 5. Size of the gap (t) can be regulated freely according to depth of etching of the recess 4. By providing the gap (t) like this, stress to be applied to the insulation protective layer 3 from the gold ball 5 can be lightened or can be removed.

Inventors

• 👤 Kazuo Matsumura
• 👤 和夫 松村

Bibliographic Details