Semiconductor device

Abstract

Abstract PURPOSE:To improve rigidity adding an emitter diffusion resistance to each unit transistor and to contrive the stable operation of a great current by constituting the emitter region in a unit transistor with a diffusion layer and an emitter coupling. CONSTITUTION:Emitter active regions 331, 332 and narrow emitter coupling 341, 342 [the width (c)] are provided in the emitter region 32 of a unit transistor 22 and the emitter active regions 331, 332 and an emitter electrode 35 are coupled so it is a state that the emitter resistance RE of the emitter couplings 341, 342 is inserted. For this reason, if a current is concentrated in each transistor, the electric potential applied to the emitter resistance RE is made higher but the electric potential applied to the emitter 41 and the base 42 of the total transistor is not changed and the voltage applied to the P-N junction between the base and the emitter of each unit transistor is made lower and consequently, concentration of current is mitigated.

Inventors

• 👤 Kenji Yamane
• 👤 健次 山根

Bibliographic Details