Production of single crystal substrate of silicon carbide

Abstract

Abstract PURPOSE:To mass produce alpha-type SiC single crystal substrate in high reproducibility in an industrial scale, by growing alpha-type silicon carbide single crystal through a carbon layer on a crystal growth consisting of beta-type SiC single crystal film. CONSTITUTION:A graphite single crystal layer is firstly deposited on a carbon middle layer on the beta-type single crystal substrate 15 of silicon carbide, and an alpha-type silicon carbide single crystal film is grown. The graphite single crystal layer is formed by evacuating the reaction tube 1, replacing the gas in the tube with an argon gas, sending a high-frequency electric current to the work coil 4 to heat the specimen stand 2 made of graphite, and to raise the temperature of the single crystal substrate 15 of beta-type silicon carbide to 1,600-2,000 deg.C. Then, propane as a raw material and hydrogen, etc. as a carrier gas are fed from the branched pipe 5, to form a the graphite single crystal layer. Then, the temperature of the beta-type silicon carbide substrate 15 is kept at 1,500-1,600 deg.C, monosilane and propane as gases of raw material and a hydrogen gas, etc. as a carrier gas are fed from the branched pipe 5 to the reaction tube 1 to carry out growth, and a single crystal film of alpha-type silicon carbide is obtained on the whole surface of the substrate 15.

Inventors

• 👤 Mitsuhiro Shigeta
• 👤 光浩 繁田
• 👤 Akira Suzuki
• 👤 彰 鈴木
• 👤 Masaki Furukawa
• 👤 勝紀 古川

Bibliographic Details