Semiconductor device

Abstract

Abstract PURPOSE:To reduce hot carrier implanting phenomenon at a high speed by forming a silicide layer in a boundary over a polycrystalline silicon layer, and providing a high melting point metal extended on an insulating film on a drain diffused layer to reduce the resistance of a gate electrode. CONSTITUTION:A gate insulating film 103 is provided on an active region of a transistor surrounded by a field insulating film 102 on the surface of a semiconductor substrate 101, and a polycrystalline silicon 104 implanted with an impurity is formed at the prescribed position of the film 103. The upper layer of the silicon 104 is coated with a high melting metal 105 to be silicified with a boundary to be coupled to form integrally a gate electrode. An opposite conductive type low density source diffused layer 106 to the substrate 101 and a low density drain diffused layer 107 are formed in the substrate 101 of the lower layer side of the metal 105 contacted on the film 103, and a high density source diffuse layer 108 and a high density drain diffused layer 109 are formed under the film 103 not coated with metal 105.

Inventors

• 👤 Minoru Araki
• 👤 荒木　稔

Bibliographic Details