Semiconductor laser

Abstract

Abstract PURPOSE:To keep small the phenomena that the first and second majority carriers leak out and transfer to higher-degree levels by a method wherein the widths of forbidden bands provided in respective layers are brought into a required relation so that said carriers can easily pass through the first and second barrier layers according to the tunnel effect. CONSTITUTION:The forbidden band width of the first clad layer 1 is Ec1; that of the first guide layer 2 is Eg1; that of the first barrier layer 3 is Eb1; that of a quantum well layer 4 is Ew; that of the second barrier layer 5 is Eb2; that of the second guide layer 6 is Eg2; and that of the second clad layer 7 is Ec2. These forbidden band widths are allowed to hold a relation of Ew<Eg1<Ec1, Ew<Eg2< Ec2, Eg1<Eb1, and Eg2<Eb2.

Inventors

• 👤 Mitsunori Sugimoto
• 👤 杉本　満則

Bibliographic Details