Reference voltage diode

Abstract

Abstract PURPOSE:To obtain the titled element of low noise and high surge withstand voltage without separate design for low noise and for surge resistance by a method wherein a guard ring is formed in the surface of a semiconductor substrate, and a diffused region of high concentration is formed over the inside along the outer peripheral line. CONSTITUTION:An Si oxide film 22 is formed on the surface of the N typ semiconductor substrate 21 restricted to 0.4mm.<2> in chip size. The P type guard ring region 23 is formed into the substrate 21 almost over the whole area by diffusion from the aperture in such a manner that the ring inner area is in a range of 700-3,000mum<2> with an inner diameter of 40mum and an outer diameter of 260mumX260mum. A P<+> type diffused region 24 is formed by superposition over the inside along the outer peripheral line of this guard ring region 23. After an Au alloy electrode 25a is formed by corresponding to the diffused region 24, electrodes 25b and 26 made mainly of Ag are formed.

Inventors

• 👤 Kaoru Nakagawa
• 👤 中川　薫
• 👤 Yoshio Yamamoto
• 👤 山本　善生

Bibliographic Details