Semiconductor manufacturing equipment

Abstract

Abstract PURPOSE:To enable dry etching in the optimum state by changing over a change-over switch at each time of sputter etching of a target on a wafer and plasma etching for removal of a deposited organic substance on the inner surface of a chamber. CONSTITUTION:At the time of reactive sputter etching of the target on the wafer 7, an anode plate 4 is changed over to the ground state by the change- over switch 8 into a self-bias state by the difference between the total area of the chamber 1 and the anode plate 4 and the area of a cathode 5, thus enabling anisotropic reactive sputter etching. In the case of removing an organic substance such as resist deposited on the inner surface of the chamber 1 by means of O2 plasma etching, the areas of the opposed electrode plates are equalized by changing the anode plate 4 over to the non-ground state, thus eliminating the self-bias; then, the deposited organic substance on the whole inner surface of the chamber 1 can be effectively removed.

Inventors

• 👤 Yoshio Tate
• 👤 館　良男

Bibliographic Details