Single axial mode semiconductor laser

Abstract

Abstract PURPOSE:To increase the photo output by improvement of a Fabry-Perot inhibition structure by a method wherein both end surfaces are formed by cleavage, and a reflection-preventing film is formed at least on one end surface of a thickness about (m/2-1/4) times the oscillation wavelength in said film. CONSTITUTION:A diffraction lattice 100 of 1,500Angstrom depth repeating at the period of 4,000Angstrom is formed on an N type InP substrate 1 over the entire surface. An N type InGaAsP optical guide layer 2, a non-doped InGaAsP active layer 3, and a P type InP clad layer 4 are laminated thereon. Next, two grooves 51 and 52 are formed, and a mesa stripe 50 containing the active layer 3 is formed by being sandwiched thereby. Then, a P type InP current block layer 5, an N type InP current confinement layer 6, a P type InP buried layer 7, and a P type InGaAsP cap layer 8 are laminated. After an SiO2 film 60 is formed, the part above the mesa stripe is removed in the shape of a stripe 30, and Ti/Pt/Au films are successively evaporated thereon into the P-side electrode 20.

Inventors

• 👤 Ikuo Mito
• 👤 郁夫 水戸
• 👤 Masayuki Yamaguchi
• 👤 山口　昌幸

Bibliographic Details