Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable element isolation without bird's beaks and with flat surfaces by a method wherein a recess is formed in an Si substrate by leaving the nitride layer at a required part, and an SiO2 layer is formed in the recess. CONSTITUTION:A thermal oxide layer 2' is attached to the Si substrate 1, and N2 ions are implanted. After the implantation, an SiO2 layer 2 and a homogeneous Si3N4 layer 3 thereunder are formed in the surface by annealing in the atmosphere of nitrogen and then oxygen. The SiO2 layer and the Si3N4 in the part for selective oxidation are removed, and the substrate is then removed. An SiO2 layer 5 is grown by oxidation under high pressure after low temperature annealing and chemical treatment.

Inventors

• 👤 Yasuo Hayashi
• 👤 林　靖夫
• 👤 Hideharu Nakajima
• 👤 中嶋　英晴
• 👤 Shigeki Kayama
• 👤 加山　茂樹
• 👤 Takashi Shimada
• 👤 喬 島田

Bibliographic Details