Examination method for mask defect

Abstract

Abstract PURPOSE:To detect even <=1mum minute defects by irradiating a face opposite to a mask pattern forming face with an energy beam after a photoelectric film is stuck to the mask pattern forming face and detecting an electron beam from the photoelectric film. CONSTITUTION:A pattern 2b consisting of chromium or the like is stuck to the lower face of a glass plate 2a to form a mask 2. A photoelectric film 9 which emits photoelectrons by irradiation of optical beam is stuck to the pattern 2b of the mask 2. This mask is placed on a sample table 1 with the pattern forming face side turned down; and when X-rays converged to a spot are irradiated to the upper face side of the mask 2, the quantity of the transmitted beam is varied in accordance with presence/absence of the pattern of the mask 2, and photoelectrons are emitted from the photoelectric film 9 in accordance with this quantity of the transmitted beam, and these emitted photoelectrons are detected by an electron detector 10. The sample table 1 is not only moved continuously in the X direction but also moved stepwise in the Y direction, and a scan signal corresponding to the pattern of the mask 2 is detected to examine whether the pattern is correct or not.

Inventors

• 👤 Sadao Sasaki
• 👤 佐々木　貞夫
• 👤 Toshiaki Shinozaki
• 👤 篠崎　俊昭

Bibliographic Details