Gaas fet circuit

Abstract

Abstract PURPOSE:To obtain excellent high-frequency characteristics and balancing characteristics by connecting a source electrode of the 3rd FET to a common connecting point of source electrodes of two FETs and connecting its gate to a high-frequency signal input terminal. CONSTITUTION:An FET48 is provided to correct the loss of a high-frequency current flowed to the source of an FET47. The presence of the FET48 allows the input high-frequency signal fed to a terminal 6 to be fed to the gate of an FET46 and also to the gate of the FET48 to correct the high-frequency current flowed to a resistor 21. As a result, the high-frequency current flowed to the source and drain of the FET47 is increased and the level of output terminals 7 and 8 is arranged. Thus, an unbalance/balance exchange circuit with excellent high-frequency characteristics and well-balanced output levels is realized on a GaAs wafer by utilizing the high-speed property of a GaAs FET.

Inventors

• 👤 Noboru Kusama
• 👤 草間　昇

Bibliographic Details