semiconductor laser equipment

Abstract

Abstract PURPOSE:To obtain a high output while operating an APC by attaching an insulating film on the outside of a metallic film on one cavity end surface. CONSTITUTION:SiO2 films 2 in 2,750Angstrom thickness are attached on both cleavage planes of a laser chip 1 through a sputtering method. A gold film 3 in 1,000Angstrom thickness is attached only on one cleavage plane. An SiO2 film 6 in 1,000Angstrom thickness is attached on the gold film 3. The laser chip 1 is bonded with a radiator 4 made of copper by using tin. The metal 3 cannot protrude because the outermost section of a cavity end surface is constituted by not a metal but the insulating film 6 in the laser element 1. Accordingly, beams can be lead out of the side, to which the gold film 3 is attached, of a cavity even under the state in which the laser element is bonded with the radiator 4, and an APC can be operated.

Inventors

• 👤 Kunio Ito
• 👤 国雄 伊藤
• 👤 Masaru Wada
• 👤 優 和田
• 👤 Yuichi Shimizu
• 👤 裕一 清水

Bibliographic Details