Optical semiconductor device

Abstract

Abstract PURPOSE:To increase an output from a light-emitting diode, and to save the labor of a manufacturing process by using a recessed section formed to an electrode on the beam leading-out side of the light-emitting diode as a lens receiving section, forming the electrode in thickness, which can perform the placing of a spherical lens, while employing the fringe section of the lens receiving section as a guide, applying a resin on the receiving section and placing the spherical lends thereon. CONSTITUTION:N type GaAlAs layers 5 and 6, P type GaAlAs layers 7 and 8 and a silicon dioxide film 9 and an Au-Zn-Au electrode 10 are formed. An electrode 34 is formed thickly by a gold germanium (AuGe) layer -silver (Ag)-a gold plated layer, and a circular recessed section 35 in a figure such as a plan view is shaped at the central section of the electrode. The center of the circular recessed section 35 is conformed to the center of a light-emitting section. The re cessed section 35 is used as a lens housing section 35. The electrode 34 is formed by evaporating the AuGe layer 41 on the N type GaAlAs layer 5, and a resist pattern 42 is shaped in a lens housing section forming region. An Ag and Au plated layer 43 is formed through Ag and Au plating, the resist 42 and the AuGe layer under the resist 42 are removed, and the electrode to which a lens housing section 44 is shaped is formed.

Inventors

• 👤 Toshiyuki Hirota
• 👤 広田　敏行

Bibliographic Details