Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent generation of leak current and deterioration of subthreshold current characteristics, and to contrive improvement in characteristics and high integration by a method wherein the region whereon a channel stopper generating by the RIE of an Si substrate will not be formed is removed. CONSTITUTION:An SiO2 film 22 is laminated using the main surface 21 of a P type Si substrate. An etching is performed on the SiO2 film 22, and photoresist is removed. Subsequently, the Si substrate 21 is etched. Then, ions are implanted, and a channel stopper layer 23 is formed on the side wall part and the bottom part of the Si substrate. After the SiO2 film 22 has been removed, a thermal oxidization film is formed on the whole surface, and an SiO2 film 24 is laminated thereon. A photoresist 25 is applied on the whole surface. The SiO2 film 24 is left at the recessed part only of the Si substrate by performing an etching on the photoresist 25 and the SiO2 film 24 at approximately same etching speed using an RIE method.

Inventors

• 👤 Ryozo Nakayama
• 👤 中山　良三

Bibliographic Details