Method of correcting pattern for photo-mask

Abstract

Abstract PURPOSE:To bury a white defect section, and to correct pattern width by forming a novel light-shielding metallic thin-film on a negative type photo-resist, only predetermined width thereof is removed by plasma discharge. CONSTITUTION:A negative type photo-resist 4 containing a white defect section 3 is applied on the main surface of a glass substrate 1 on the side to which a metallic thin-film pattern 2 is formed. Ultraviolet beams 7 are projected to expose the negative type photo-resist 4, and a section 6 not exposed in the resist section on a region of the metallic thin-film pattern 2 is formed and removed. Clearances (d) are removed through plasma discharge extending over the edge sections of residual resists 8 from the edge sections of the metallic thin- film pattern 2 through plasma ashing. A novel light-shielding metallic thin-film 10 is formed, residual resists 9 and the thin-films 10 on the residual resists 9 are peeled by a resist peeling agent, and a pattern section 11 is formed and the white defect section 3 is buried. Accordingly, pattern width is corrected while the metallic thin-film can be formed to the white defect section in height approximately flat to the pattern.

Inventors

• 👤 Kiyofumi Yamada
• 👤 潔文 山田
• 👤 Yasumasa Kobayashi
• 👤 保正 小林

Bibliographic Details