Projection exposure method of pattern reflection type

Abstract

Abstract PURPOSE:To perform the exposure processing inexpensive by forming a pattern consisting of a light-reflective film on a mask (or a reticle) and irradiating the surface with light and projecting the reflected light from the pattern to the surface of a substrate to be exposed. CONSTITUTION:The irradiation light from a light source 11 is made incident to a half mirror 17 through a condenser lens 12, and the reflected light from the half mirror 17 is made incident to the surface of a reticle 13. The light incident to the reticle 13 is reflected on the light-reflective film pattern, and the reflected light is transmitted through the half mirror 17 and is reduced by a reduction lens 14, and a reduced pattern is printed onto a wafer 15. Materials having a high reflection factor of light are used as materials of the light-reflective film pattern formed on the surface of the reticle 13. Even if a conventional chromium film having 600Angstrom thickness is used, it has high reflectivity of light, and a reflective pattern having a sufficient exposure capability is obtained.

Inventors

• 👤 Takashi Matsumoto
• 👤 隆 松本

Bibliographic Details