Semiconductor device

Abstract

Abstract PURPOSE:To reduce the manufacturing cost and to contrive the miniaturization of a circuit construction by facilitating the manufacture of a power MOSFET by a method wherein the power MOSFET and other elements are integrated on a single semiconductor chip, and electronic components are formed in regions of the same conductivity type, same impurity concentration, and same depth, so that all of elements may be formed by the same process of diffusion. CONSTITUTION:The power MOSFET (a), a resistor (b), a P-channel MOSFET (c), and an N-channel MOSFET (d) are formed in an N type Si epitaxial layer 2 formed on an Si substrate 1. The drain of the power MOSFET is constructed of the layer 2 and the substrate 1, which substrate is taken out to the outside. The resistor consists of a diffused layer 11 formed by the same process as that for a diffused layer 3. Besides, P-channel type MOSFET consists of the source region 15 and the drain region 16 diffusion-formed at the same time with the diffused layer 3 and of P<+> type regions 17 and 18 diffusion-formed in the regions 15 and 16 at the same time with diffused layers 4 and 5. Further, the N-channel type MOSFET is formed in a P-well 24 diffusion-formed at the same time with the diffused layer 3. Then, these are wired to each other into the circuit construction.

Inventors

• 👤 Hiroshi Yoshida
• 👤 浩 吉田

Bibliographic Details