JPS52132684A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Insulating gate type field effect transistor
Assignee: Sony Corp
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Filing: 1976-04-29
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Granted: —
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Expires: 1996-04-29
Abstract
Abstract PURPOSE: Shorting due to migration from the Al electrode and abnormal diffusion of the source is prevented and a reverse-connection diode for gate protection is formed together with MOSFET, thereby manufacturing IGFET. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Akiyasu Ishitani
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-07 18:16
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D62/00; H10D62/10; H10D62/124; H10D62/126; H10D62/127; H10D62/17; H10D62/393; H10D89/00; H10D89/60; H10D89/601; Y; Y10; Y10S; Y10S148/00; Y10S148/145; Y10S148/167
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