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JPS6074458A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor device

Assignee: Toshiba Corp
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Filing: 1983-09-29
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Granted: —
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Expires: 2003-09-29
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Abstract

Abstract PURPOSE:To obtain high mechanical strength for the title semiconductor device by a method wherein an element terminal, an inner lead terminal and an outer lead are connected and formed in one body through the intermediary of a dam part. CONSTITUTION:Four outer leads 2 are led out from the side part of a resin- sealed body 1. Two of the four leads 2 are connected to an inner lead terminal 5 through a dam part 4. The remaining two leads are connected to an element terminal 6 through the intermediary of the dam part 4. A widely-formed element mounting part 7 having heat dissipating function is formed at the tip part of the terminal 6. A prescribed element 9 is installed at the mounting part 7 through the intermediary of a solder layer 8. A connector lead 10 is installed on the element 9, located on the mounting part 7, and a terminal 5 through the intermediary of the solder layer 8.

Inventors

  • 👤 Yoshimasa Kudo
  • 👤 工藤 好正

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-03 15:27
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/461

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Total Claims: 0
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