Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To prevent deterioration of characteristics of an element by a method wherein an oxide layer having the absolute value of formation free energy smaller than that of silicon dioxide is provided between a silicon dioxide layer and a high melting point metal to be used as an electrode. CONSTITUTION:In the semiconductor device such as an MOS and the like, a high melting point metal is first vapor-deposited on the SiO2 layer 1' located on the surface of an Si substrate 4' in a low degree of vacuum atmosphere. Then, a metal oxide layer 3' is formed between said SiO2 layer 1' and a metal layer 2'. At this time, when the oxide layer 3' having the absolute value of formation energy smaller than that of SiO2 is brought to come in contact with the SiO2 layer 1', the SiO2 layer 1' is hardly dissociated, and the reaction between SiO2 and metal can be prevented, thereby enabling to prevent the deterioration of element characteristics. Mo, W, Ta, Fe, V, Nb, Co, Ni, Mn and the like can be used for the oxide layer 3'.

Inventors

• 👤 Seiichi Iwata
• 👤 誠一 岩田
• 👤 Nobuyoshi Kobayashi
• 👤 伸好 小林
• 👤 Naoki Yamamoto
• 👤 直樹 山本

Bibliographic Details