Semiconductor light emitting device

Abstract

Abstract PURPOSE:To contrive to improve the temperature characteristic by a method wherein the values of the energy band gaps of an active layer and a clad layer and those of the gradients thereof are suitably selected. CONSTITUTION:The titled device is formed by lamination of an n<+> type Ga buffer layer 2, an n type AlxGa1-xAs clad layer 3, an n type AlyGa1-yAs grated clad layer 4, a GaAs clad layer 5, a p<+> type AlzGa1-zAs clad layer 6, and a p<+> type GaAs contact layer 7 on an n<+> type GaAs semiconductor substrate 1. In this constitution, the layer 3 can have a value of 0<x<=1, and the layer 4 0<y<=1, and the layer 5 can be set any type of n, p, i, and un-dope. The layer 6 has a value of 0<z<=1, where the range of (z) is the same as that of the (y) value of the layer 4, particularly larger than 0.2. It is preferable that the variation in the composition ratio of the layer 4 is parabolic, but it can be also linear. This manner enables the reduction in the amount of leakage of carriers having the small effective mass to the clad layer even in the increase in temperature, resulting in the improvement of the temperature characteristic with the property of low threshold value being maintained.

Inventors

• 👤 Shigenobu Yamagoshi
• 👤 茂伸 山腰

Bibliographic Details